sf6 gas measurement singapore

Electron Transfer to SF6and Oriented CH3Br

gas (SF6) is added to the CH3Br/He gas mixture in the nozzle beam II; Liu, K., Wagner, A., Eds.; World Scientific: Singapore, 1995; p

Method of fabricating variable length vertical transistors

Zhou, Mei Sheng (Singapore, SG) Yen, Daniel (Singapore, SG) A selective RIE procedure, using Cl2 or SF6 as an etchant for polysilicon

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Method to form high performance copper damascene

Goh, Wang Ling (Singapore, SG) Tse, Man Siu (Singapore, SG) The shielding layer 56 is etched using a chemistry of, for example, SF6

Self aligned T-top gate process integration

Pradeep, Yelehanka Ramachandramurthy (Singapore, gas mixture such as dichlorosilane (SiCl2H2) CHF3 or SF6—O2 or SF6/HB8 as an etchant

Single wafer in-situ dry clean and seasoning for plasma

Xuechun, Dai (Singapore, SG) Chen, Liang (SF6 into said plasma etch chamber with a flow 4) Current processes use gas only to clean

Modeling SF/sub 6/ circuit breaker for shunt reactor

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Double vibrational collision-induced Raman scattering by SF6-

CF4 in a large range of gas pressures [34]. Our study concludes that the SF6–N2 potential Slanina (World Scientific, Singapore, 1998). [4

Process to fabricate an integrated micro-fluidic system on a

Yan, Tie (Singapore, SG) Heng, Chew Kiat (Singapore, SG) implemented using gases selected from the group consisting of SF6, O2, and

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High aspect ratio trench isolation process for surface

Sridhar, Uppili (Singapore, SG) Nagarajan, Ranganathan (Singapore, SG) In an STS SCP system, using a cyclical etch process—etching with SF6

Incidence of congenital heart disease in Singapore

Addition of inert gases (He, A, N-2 and SF6) increased W-max thus Muir CS. Incidence of congenital heart disease in Singapore. Br Heart J

Multiple-step plasma etching process for silicon nitride

Liu, Wen Jun (Singapore, SG) Zhou, Mei Sheng (Singapore, SG) (SF6) gas flow rate of from about 20 to about 200 standard cubic

the gas humidity in SF6 gas - GA20 - Singapore

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Chan, Chia Sern (Singapore, SG) XU, Luxiang (Singapore, SG) nano-cone array of nearly 1:1 aspect ratio using SF6 (etchant gas)

LOCOS mask for suppression of narrow space field oxide

Assignee: Chartered Semiconductor Manufacturing Ltd. (Singapore, SG) gas comprising SF6 at a flow rate of between about 50 and 100 SCCM,

Companies - Switches, sulphur hexafluoride (SF6) - Singapore

Companies - Switches, sulphur hexafluoride (SF6) - Singapore Switches, sulphur hexafluoride (SF6) Singapore1 Electrical, Electronics & Optical Electrical

Deep SiO2 etching with Al and AlN masks for MEMS devices

Singapore Science Park II, Singapore, 117685, Singapore), AC(Institute ofThree gas chemistries (C4F8/O2, CF4 and SF6) and their mixtures were

Angled-wedge chrome-face wall for intensity balance of

Chua, Gek Soon (Singapore, SG) Tan, Sia The SF6 etch etches the sidewall to have a balancing of RF power, etchant gases and

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Process flow for a performance enhanced MOSFET with self-

Lau C. K. (Singapore, SG) Samudra, Ganesh Shankar (Singapore, SG) SF6 chemistry resulting in a final depth of said gate recess of between

Method for etching a trench having rounded top corners in a

Jain, Alok (Singapore, SG) Low, Michelle gas comprising SF6 or CF4 or a combination Tencor UV 1020 thin film thickness measurement

Method of preserving the top oxide of an ONO dielectric layer

Seah, Xavier Teo Leng (Singapore, SG) Subrahmanyam, Chivukula (Singaporeetching (RIE), procedures using Cl2 or SF6 as an etchant for polysilicon

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at GENERAL M SINGAPORE Pte Ltd and PT Gas-insulated transformer The SF6 insulated test measurement, insulation resistance measurements are